smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source kdb2570 (FDB2570) features 22 a, 150 v. r ds(on) =80m @v gs =10v r ds(on) =90m @v gs =6v low gate charge fast switching speed high performance trench technology for extremely low r ds(on) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150 v gate to source voltage v gss 20 v drain current-continuous i d 22 a drain current-pulsed i dp 50 a power dissipation 93 w derate above 25 0.63 w/ thermal resistance junction to ambient r ja 62.5 /w thermal resistance, junction-to-case r jc 1.6 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123 sales@twtysemi.com 1 of http://www.twtysemi.com
2 of 2 smd type mosfet electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 150 v drain cut-off current i dss v ds =120v,v gs =0 1 a gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250a 2.0 2.6 4.0 v v gs =10v,i d =11a 61 80 v gs =6v,i d =10a 63 90 v gs =10v,i d =11a,t c =125 127 175 on?state drain current i d(on) v gs =10v,v ds =10v 25 a forward transconductance g fs v ds =10v,i d =11a 39 s input capacitance c iss 1911 pf output capacitance c oss 106 pf reverse transfer capacitance c rss 33 pf total gate charge qg 40 56 nc gate-source charge qgs 7 nc gate-drain charge qgd 12 nc turn-on delay time t d(on) 12 22 ns rise time t r 510ns turn-off delay time t d(off) 33 53 ns fall time t f 23 37 ns maximum continuous drain-source diode forward current i s 22 a source to drain diode voltage v sd v gs =0v,i s = 11 a * 0.83 1.3 v * pulse test: pulse width 300s, duty cycle 2.0% v ds =75v,i d =11a,v gs =10v* drain to source on-state resistance r ds(on) m v ds =75v,v gs =0,f=1mhz v dd =75v,i d =1a, v gs =10v,r gen =6 * smd type kdb2570 (FDB2570) smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 4008-318-123 sales@twtysemi.com 1 of http://www.twtysemi.com
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